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- Program
MONDAY, SEPTEMBER 25, 2017
8.45am - Registration
9.15am - Workshop opening (ARCSIS and CMP)
9.30am
Keynote speaker – Betty Prince, CEO. Memory Strategies International (USA) - "Embedded Non-Volatile Memories for Intelligent IoT"
Session 1 - Embedded flash memories Technology: state of the art and trends - Part1
Chairman: Didier Nee, Wisekey, France
10.15am
"TSMC eNVM technology"– Dan Kochpatcharin, TSMC Europe (The Netherlands)
10.40am - Break
11.05am
"A new core transistor equipped with NVM functionality without using any emerging memory materials" – Yasuhiro Taniguchi, Floadia (Japan)
11.30am
"Scaling and Demonstration of a 28nm Logic-Process-Compatible Split-Gate Flash Memory Technology" – Alex Kotov, SST (USA)
11.55am
"A Highly Scalable Floating-Gate Cell for Embedded-Flash Applications" – Weiran Kong, Huahong Grace Semiconductor Manufacturing (China)
12.20pm - Lunch
Session 2 - Emerging and leading edge technologies for embedded NVM - Part 1
Chairman: David Naura, Invia, France
2.00pm
"Embedded charge-trap non-volatile memory technologies at 40-nm node and beyond" – Igor Kouznetsov, Cypress Spansion (USA)
2.25pm
"Non-Volatile Resistive Memory: a Started Revolution Towards the Memory of the Future" – Gabriele Navarro , CEA- LETI, MINATEC Campus (France)
2.50pm
"Leading logic NVM technlogy advancing into 7NM finfet node : Challenges and Solutions" – James Huang, eMemory (Taiwan)
3.15pm
"Voltage Compatibility of ReRAM operation with CMOS" – Dirk Wouters, (RWTH) Aachen University (Germany)
3.40pm
"FeFET - The ideal embedded NVM for the age of IoT" – Stefan Müller, Ferroelectric Memory (Germany)
4.05pm - Break
Session 3 - Device and architecture - Part 1
Chairman: Philippe Boivin, STMicroelectronics, France
4.30pm
"SMIC Advanced eNVM Solutions For Security IOT" – Stephen Zhou, SMIC (China)
4.55pm
"Split-Gate Flash on 28-nm HKMG Logic Process For High-Speed Embedded Secure-Element Chip Applications" – Yong Kyu Lee, Samsung Electronics (Korea)
5.20pm
"SE-RICH GESE-BASED OTS Selector Engineering Targeting High Density Crossbar Resistive Memory" – Anthonin Verdy, CEA-Leti (France)
5.45pm - End of the conference day
TUESDAY SEPTEMBER 26, 2017
8.45am - Registration
Session 2 - Emerging and leading edge technologies for embedded NVM - Part 2
Chairman: David Naura, Invia, France
9.00am
"Unleash new system architectures with Crossbar ReRAM for embedded applications and storage class memories" – Sylvain Dubois, Crossbar (USA)
9.25am
"40nm embedded ReRAM platform in foundry with highly reliable TaOx cell technology" - Takumi Mikawa, Panasonic UMC (Japan)
9.50am
"High-performance and Low-power Operations with RRAM-based FPGAs" - Pierre-Emmanuel Gaillardon, The University of Utah (USA)
10.15am
"High-speed voltage-Control spintronics memory having high-efficiency of writting, a potential of unlimited endurance, and broad design windows"- Hiroaki Yoda, Toshiba (Japan)
10.40am - Break
Session 4 - Users, focus on connected objects, IOT
Chairman: Philippe Boivin, STMicroelectronics, France
11.05am
"Emerging NVM technologies: toward mass production in MCU embedded market" – Jérôme Azémar, Yole Développement (France)
11.30am
"Inkjet - Printed Flexible Conductive Bridge RAM" – Bernhard Huber, Munich University of Applied Sciences (Germany) / INRS-EMT (Canada)
11.55am
"NVM technologies: A hardware security point of view" – Franck Courbon - University of Cambridge (U.K.)
12.20pm
"Secure Characterisation of the OxRAM Technology"– Alexis Krakovinsky, CEA & IM2NP (France)
12.45am - Lunch / Poster session
Session 3 - Device and architecture - Part 2
Chairman: Romain Wacquez, CEA/EMSE, France
2.00pm
"Multiscale Modeling of RRAM Devices for Memory and Neuromorphic Computing Applications"– Luca Larcher, University of Modena and Reggio Emilia (Italy)
2.25pm
"Toward non-volatile digital flows"– Virgile Javerliac, eVADERIS (France)
2.50pm
"Formal Design Space Exploration for Memristor-based Crossbar Architecture"– Marcello Traiola, LIRMM / University of Montpellier (France)
3.15pm
"Resistive switching in narrow gap Mott Insulators" – Marie-Paule Besland, IMN Nantes (France)
3.40pm - Break
Session 1 - Embedded flash memories Technology: state of the art and trends - Part 2
Chairman: Didier Nee, Wisekey, France
4.05pm
"High and medium voltage devices integration on advanced eNVM"– Dann Morillon, STMicroelectronics (France)
4.30pm
"Ultra Low Power single poly non volatile memory for passive RFID applications" – Terry Lin, eMemory (Taiwan)
4.55pm
"Anti-Fuse, OTP NVM, the Only Memory Enabled at Every CMOS Process Node to 10nm Providing Code, Encryption Keys, & Confidential Data Storages" – Paolo Piacentini, Kilopass (USA)
5.20pm
"FinFET Split-Gate MONOS for Embedded Flash in 16/14nm-node and beyond"– Tomohiro Yamashita - Renesas Electronics Corp (Japan)
5.45pm - End of the conference day 2
8.30pm - Conference dinner
WEDNESDAY SEPTEMBER 27, 2017
8.45am: Registration
Session 2 - Emerging and leading edge technologies for embedded NVM - Part 3
Chairman: Romain Wacquez, CEA/EMSE, France
9.00am
"ESF3 Memory: Endurance Capability and Post-Cycling Data Retention" - Viktor Markov, SST (USA)
9.25am
"Overview of Conductive Bridging RAM (CBRAM): an ideal NVM for IoT Applications"- Philippe Blanchard, Adesto Technologies (USA)
9.50am
"Spin Orbit Torque MRAM-based circuits for non-volatile logic and memories" - Gregory Di Pendina, University of Grenoble Alpes/CNRS/CEA, INAC - SPINTEC Lab (France)
10.15am
"From material to circuit : lead the embedded NVM to the next stage" - Vincenzo Della Marca, IM2NP (France)
10.40am - Break
Session 3 - Device and architecture - Part 3
Chairman: Philippe Boivin, STMicroelectronics, France
11.05am
"Innovative design solutions for emerging NVM technologies"– Gabriele Navarro, CEA-Leti (France)
11.30am
"Unconventional uses of embedded non-volatile memory: toward the “natively intelligent” memory" - Damien Querlioz - University Paris-Sud (France)
11.55am
"NVM chip for Machine Learning Operations" - Dimitrios Rodopoulos - IMEC (Belgium)
12.20pm Lunch
2:00pm End of the conference

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